FEATURES
- Tower Semiconductor, X-FAB, TSMC (180nm)
- Synchronous Rad Hard 1024 x1 Single Port SRAM
- Operating Voltage 1.8V±10%
- Min 12ns Read/Write Cycle Time (with 50%Duty-Cycle Clock)
- Max 8ns Access Time
- Sensitive to clock rising edge
- Wide Temperature Range: -55 to +125°C
- Max Power Consumption: < 150uW/MHz
- Max Stand-by Power Consumption: < 170uW
- TID hardened up to 300 krad (Si)
- SEL hardened up to 60 MeV*cm2/mg (Si)
- SEU hardened up to 5 MeV*cm2/mg (Si)
- Compatible with foundry standard cell grid
- Suitable for digital ASICs using 6 metal levels
- Embedded macro size (130u x 430u)