RC7CSSP1K1B

FEATURES

  • Tower Semiconductor, X-FAB, TSMC (180nm)
  • Synchronous Rad Hard 1024 x1 Single Port SRAM
  • Operating Voltage 1.8V±10%
  • Min 12ns Read/Write Cycle Time (with 50%Duty-Cycle Clock)
  • Max 8ns Access Time
  • Sensitive to clock rising edge
  • Wide Temperature Range: -55 to +125°C
  • Max Power Consumption: < 150uW/MHz
  • Max Stand-by Power Consumption: < 170uW
  • TID hardened up to 300 krad (Si)
  • SEL hardened up to 60 MeV*cm2/mg (Si)
  • SEU hardened up to 5 MeV*cm2/mg (Si)
  • Compatible with foundry standard cell grid
  • Suitable for digital ASICs using 6 metal levels
  • Embedded macro size (130u x 430u)