Development of rad-hard PROMs for Space Applications
(start: 04/06/2018 end: 04/06/2020)
RAD-PROM project is funded by ASI (Agenzia Spaziale Italiana).
The project aims at the development of a non-volatile memory cell technology making leverage on AntiFuse methodology. The goal of RAD-PROM is to create a technological platform able to be used in stand-alone and embedded applications and adopting CMOS technologies from different silicon foundries.
For more info:
Cristiano Calligaro (c.calligaro@redcatdevices.it) — RAD-PROM Coordinator
Links:
https://www.asi.it/it/news/una-cella-di-memoria-made-in-italy-nello-space-market
https://www.tomshw.it/chip-resistenti-alle-radiazioni-progetto-tutto-italiano-95883
Featured Presentations:
RADEF Facility (Jyvaskyla) Set-up: RAD-PROM-RADEF
IGS-3 Facility (Palermo) Set-up: RAD-PROM-IGS-3
Featured Videos:
1. OTP Memory cell based on AntiFuse
2. Testing AntiFuse PROMs under irradiation
3. Testing AntiFuse PROMs under heavy ions
4. 64kbit PROMs electrical testing
