Publications

Cristiano Calligaro and Umberto Gatti, “Rad-hard Semiconductor Memories“, River Publishers ISBN: 9788770220200

 

Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.

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C. Calligaro and U. Gatti, “Rad-Hard Mixed-Signal IC Design, Theory and Implementation” in A. Baschirotto, P. Harpe, K. Makinwa, “Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits”, pp. 273-297, Springer, ISBN 978-3-030-25267-0, ISBN 978-3-030-25267-0 (eBook), https://doi.org/10.1007/978-3-030-25267-0

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U. Gatti, C. Calligaro, A. Parlato, E. Tomarchio, Y. Roizin, E. Pikhay, “Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization”, Proceedings of 20th IEEE MELECON Conference, June 2020, pp 388- 391 IEEE Catalog Number: CFP20MEL-USB ISBN: 978-1-7281-5199-1

C. Calligaro and U. Gatti, “Recipes to build-up a rad-hard CMOS memory”, 25th International Symposium on On-Line Testing and Robust System Design (IOLTS 2019), July 2019, pp. 216-219. 978-1-7281-2490-2/19/$31.00 ©2019 IEEE.

C. M. Andreou, D. M. González-Castaño, S. Gerardin, M. Bagatin, F. Gómez Rodriguez, A. Paccagnella, A. V. Prokofiev, A. Javanainen, A. Virtanen, V. Liberali, C. Calligaro, D. Nahmad and J. Georgiou, “Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions”, Electronics 2019, 8(5), 562; https://doi.org/10.3390/electronics8050562

C. Calligaro and U. Gatti, “Rad-hard Mixed Signal IC Design, Theory and Implementation”, AACD 2019, Milan, Italy – Technology Considerations for Advanced IC, pp 295-314.

A. Parlato, E. A. Tomarchio, C. Calligaro, C. Pace, “The Methodology for Active Testing of Electronic Devices under the Radiations”, Nuclear Technology & Radiation Protection: Year 2018, Vol. 33, No. 1, pp. 53-60.

U. Gatti, C. Calligaro, A. Graceffa, “A 400 Mbps Radiation Hardened By Design LVDS Compliant Driver and Receiver”, in Proc. of 23th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Monte Carlo (Monaco), Dec. 2016, pp. 109-112. 978-1-5090-6113-6/16/$31.00 ©2016 IEEE

U. Gatti, C. Calligaro, E. Pikhay, Y. Roizin, “Re-usable 180nm CMOS dosimeter based on a floating gate device”, in Proc. of 23th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Monte Carlo (Monaco), Dec. 2016, pp. 125-128. 978-1-5090-6113-6/16/$31.00 ©2016 IEEE

C. Calligaro et Al., “An Integrated Rad-Hard Test-Vehicle for Embedded Emerging Memories”, in Proc. of 23th IEEE International Conference on Electronics, Circuits, and Systems (ICECS), Monte Carlo (Monaco), Dec. 2016, pp. 5-8. 978-1-5090-6113-6/16/$31.00 ©2016 IEEE

C. M. Andreou, A. Javanainen, A. Rominski, A. Virtanen, V. Liberali, C. Calligaro, A. V. Prokofiev, S. Gerardin, Bagatin, A. Paccagnella, D. Gonzalez, F. Gomez, D. Nahmad, J. Georgiou, “Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies For Space Applications”, IEEE Transactions on Nuclear Science PP(99): September 2016 DOI 10.1109/TNS.2016.2611639.

C. Calligaro et Al., “Design of Resistive Non-Volatile Memories for Rad-Hard Application”, Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS) 978-1-4799-5341-7/16/$31.00 ©2016 IEEE

U. Gatti and C. Calligaro “Radiation Hardening Methodologies for Flash ADCs”, Analog Integr Circ Sig Process (2016) 87: 141. doi:10.1007/s10470-015-0627-7