Rad Hard 512kbit SRAM



  • Asynchronous rad hard 64kbit x8 Static RAM
  • Operating Voltage (I/O) 3.3V±10%
  • Operating Voltage (core) 1.8V±10%
  • 10ns address access time
  • Wide Temperature Range: -55 to +125°C
  • Low Power Consumption:
  1. Power Current (core) 3 mA max
  2. Power Current (I/O) 0.2 uA max
  3. Power Current (core) 5 mA max (300 krad)
  4. Power Current (I/O) 0.3 uA max (300 krad)
  • Radiation Hardened process and design:
  1. Total Dose 100 krad(Si) (Co60)
  2. SEL LETth > 60 MeV/mg*cm2 (Si) (Xe Ions)
  3. 2 < SEU LETth < 3 MeV/mg*cm2 (Si)
  • Packaging options:
  1. no package (waffle pack die)
  2. CERDIP (only for evaluation)


RC7C512RHM SRAM is a low voltage, high performance, asynchronous, radiation-hardened 64kbit x8 memory device using six transistor (6T) memory cells. A standard 0.18u CMOS 6 metals technology process has been used to implement RC7C512RHM with a dedicated robust rad-hard by design (RHBD) approach using ELT transistors, enhanced guard rings and ELT ESD pads.

RC7C512RHM has been specifically designed for applications with TID requirements in range of 100krad such as LEO and thanks to its very reduced die size (less than 10mm2) it is very suitable for embedded applications such as Core Processors, DSPs and Microcontrollers.