Rad Hard LVDS

RCLVDSR2T2

FEATURES

  • 400 Mbit/s 4-channel Dual Driver and Receiver
  • Dual drivers, CMOS inputs/LVDS outputs
  • Dual receivers, LVDS inputs/CMOS outputs
  • Individual Enable/Disable function
  • ANSI TIA/EIA-644 compliant
  • Power Consumption:
  1. Normal operation: 60 mW at 3.3 V
  2. Stand-by: 3.5mW at 3.3V
  • 400 Mbit/s (200 MHz)
  • Operating Voltage 3.3V±10%
  • 6 V absolute rating
  • Wide Temperature Range: -55 to +125°C
  • Radiation Hardened process and design:
  1. Total Dose 300 krad(Si) (Co60)
  2. SEL LETth > 80 MeV/mg*cm2 (Si) (Au Ions)
  3. 4 < SEU LETth < 5 MeV cm2/mg (Si)
  • Packaging options:
  1. no package (waffle pack die)
  2. CERDIP (only for evaluation)
  3. 18 lead ceramic flatpack

APPLICATIONS

  • Space
  • Medical

DESCRIPTION

RCLVDSR2T2 is dual CMOS differential line driver and dual CMOS differential line receiver, designed for application requiring low power dissipation and high data rate. The device is designed to support data rate up to 400 Mbit/s (200 MHz) utilizing Low Voltage Differential Signalling (LVDS) architecture. The RCLVDSR2D2 operates over a controlled impedance of 100 Ohm transmission media. A standard 150 nm CMOS process has been used to implement RCLVDSR2T2 with a dedicated robust rad-hard by design (RHBD) approach.

RCLVDSR2T2 has been specifically designed for hostile environments such as LEO, MEO and GEO, and medical application requiring very low temperatures.