Development of Rad Hard Flash memories for space applications

(start date 09/01/2011 — end date 02/28/2014)

SkyFlash project is funded by the European Union’s 7th Framework Programme Collaborative Project

SkyFlash 262890 FP7 Project aims to develop a strong rad hard by design (RHBD) methodology for the realization of non volatile flash memories based on standard CMOS 180nm processes using memory cells based on floating trap ONO (Oxide-Nitride-Oxide) approach (Flash memories). The methodology will be focused on environments affected by radiation due to protons, electrons and high energy ions (heavy ions) such as low and high orbits (satellites) or deep space (probes).

The main ideas at the base of the project are the following:

1. development of rad-hard integrated silicon devices acting on the design more than on fabrication process;

2. application of non volatile memory technology (floating gate/floating trap cells) in space applications.

SkyFlash consortium includes :