Rad Hard 256kbit AntiFuse OTP



  • Asynchronous rad-hard 32kbit x8 OTP memory
  • Operating Voltage (I/O) 3.3V±10%
  • Programming voltage 5V
  • 30ns max address access time
  • Wide Temperature Range: -55°C to +125°C
  • RC28F256ARH uses IHP SG13S process
  • Max Power Consumption:
  1. Core: 20mW @ 30MHz (READ)
  2. Core: 60mW (WRITE)
  3. Core: 50uW (Stand-by)
  4. I/O: 1mW @30MHz (READ)
  5. I/O: 2mW (WRITE)
  6. I/O: 0.3mW (Stand-by)
  • Radiation Hardened process and design:
  1. Total Dose > 600 krad (Si)
  2. SEL LETth > 80 MeV cm2/mg (Si)
  3. SEU LETth > 40 MeV cm2/mg (Si)
  • Packaging options:
  1. no package (waffle pack die)
  2. 28-Lead Flatpack (only for evaluation)
  3. 28-Lead CERDIP (only for evaluation)
  4. Embedded macro


RC28F256ARH OTP is a single voltage (3.3V), asynchronous, rad-hard 32kbit x8 memory device using anti-fuse based One-Time Programmable (OTP) memory cells. A standard 130nm CMOS process has been used to implement RC28F256ARH with a dedicated robust Rad-Hard By Design (RHBD) approach.

RC28F256ARH has been specifically designed for hostile environments. A dual matrix topology guarantees safer reading margin and better resiliency to single events.