RC7C512RHM

RC7C512RHM

RC7C512RHM SRAM is a low voltage, high performance, asynchronous, radiation-hardened 64Kbit x8 memory device using six transistor (6T) memory cells. A standard 0.18u CMOS 6 metals technology process with enhanced GOX fabrication has been used to implement RC7C512RHM with a dedicated robust rad-hard by design (RHBD) approach. The reduced area occupation is obtained by a 6T SRAM cell optimized for SEE with standard shaped n-channel transistors.

Leave a Reply

Your email address will not be published. Required fields are marked *