RAD-PROM PCB for testing AntiFuse memory cells is ready

Milan 22/01/2019. In the framework of RAD-PROM project funded by ASI (Italian Space Agency) the first PCB to be used under Cobalt 60 and Heavy Ions has been designed and validated. Manufacturing is now on-going and it will represent the first test-bed for making in-situ evaluation of rad-hard AntiFuse memory cell developed in two different silicon process (X-FAB 180nm and IHP 130nm).

The test-bed is completely passive and able to host in a ZIF socket silicon components assembled in standard dual-in-line ceramic packages. The test-board is complete of passive cables and adapters driven by a shielded mother board hosting a FPGA providing test patterns to make running the test chip.