RC7C4096RHM

RC7C4096RHM

RC7C4096RHM SRAM is a low voltage high performance, asynchronous, radiation-hardened 512Kbit x8 memory device using six transistor (6T) memory cells. A standard 0.18u CMOS 6 metals technology process has been used to implement RC7C4096RHM with a dedicated robust rad-hard by design (RHBD) approach.

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