RC7C1024RHS

RC7C1024RHS

RC7C1024RHS SRAM is a low voltage, high performance, asynchronous, rad-hard 128Kbit x8 memory device using 6T memory cells SEE-enhanced with Miller Capacitor. A standard 0.18u CMOS 6 metals technology process has been used to implement RC7C1024RHS(T/X) with a dedicated robust rad-hard by design (RHBD) approach. RC7C1024RHS(T/X) has been specifically designed for applications with TID requirements in range of 300 krad (Si) such as satellite and probe boards.

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