RC7C512RHS

RC7C512RHS

RC7C512RHS SRAM is a low voltage, high performance, asynchronous, radiation-hardened 64Kbit x8 memory device using six transistor (6T) memory cells SEE-enhanced with Miller Capacitors. A standard 0.18u CMOS 6 metals technology process has been used to implement RC7C512RHS with a dedicated robust rad-hard by design (RHBD) approach using ELT transistors, enhanced guard rings and ELT ESD pads. RC7C512RHS has been specifically designed for applications with TID requirements in range of 100Krad-300Krad such as satellite and probe boards.

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