RC7C512RHH

RC7C512RHH

RC7C512RHH SRAM is a dual voltage (1.8V and 3.3V), high performance, asynchronous, radiation-hardened 64Kbit x8 memory device using 6T memory cells. A standard 180nm CMOS process has been used to implement RC7C512RHH with a dedicated robust rad-hard by design (RHBD) approach. RC7C512RHH has been specifically designed for extremely hostile environments such as deep space missions, high energy physics and cryogenic medical application requiring very low temperatures (-196°C).

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